PackageVR (V)IF (mA)Int. construction
BAS40-04 |
RFQ for BAS40-04 |
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| Technical/Catalog Information | BAS40-04,215 |
| Vendor | NXP Semiconductors (VA) |
| Category | Discrete Semiconductor Products |
| Diode Type | Schottky |
| Diode Configuration | 1 Pair Series Connection |
| Voltage - DC Reverse (Vr) (Max) | 40V |
| Current - Average Rectified (Io) (per Diode) | 120mA (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 40mA |
| Current - Reverse Leakage @ Vr | 10A @ 40V |
| Reverse Recovery Time (trr) | - |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Mounting Type | Surface Mount |
| Package / Case | SST3 (SOT-23-3) |
| Packaging | Digi-Reel? |
| Drawing Number | 568; SOT23; ; 3 |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BAS40 04,215 BAS4004,215 568 1602 6 ND 56816026ND 568-1602-6 |
| Product | Manufacturers | Pack | D/C | ||||
| BAS40-04 | - | SOT23 | 04+ |
Features |
| · Low Turn-on Voltage· Low Forward Voltage - 0.5V(Max) @ IF = 30 mA· Very Low Capacitance - Less Than 5.0pF @ 1V· For high speed switching application, circuit protectionr |
| Rating |
Symbol |
Value |
Units |
| Repetitive Peak Reverse Voltage |
VRRM |
40 |
V |
| Forward Continuous Current at Tamb = 25 |
IF |
200(1) |
mA |
| Surge Forward Current at tp < 1 s, Tamb = 25 |
Ptot |
600(1) |
mA |
| Power Dissipation(1) at Tamb = 25 |
Ptot |
200(1) |
mW |
| Thermal Resistance Junction to Ambiant Air |
RthJA |
430(1) |
/W |
| Junction temperature |
Tj |
150 |
|
| Storage Temperature Range |
Ts |
55 to +150 |